ultra-high vacuum (uhv) meaning in English

超高真空

In succession , tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering , and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber . in addition , the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ) , and the ti content in the film is approximately 51at %
按照改进的工艺参数，在单晶硅衬底上溅射-淀积了tini薄膜，并进行了超高真空退火， dsc法测得其马氏体逆相变峰值温度为72 ，利用能谱分析( eds )技术测得其ti含量约为51at ，通过对非晶tini薄膜与单晶硅衬底之间的界面进行eds及x射线衍射( xrd )分析，发现在用大功率( 2000w )直流磁控溅射法制备tini薄膜过程中，存在ti 、 ni与si的双向扩散，发生了界面反应，并有三元化合物ni _ 3ti _ 2si生成。